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0.12 A, 600 V, 45 ohm, N-CHANNEL, Si, POWER, MOSFET

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BSP125H6327
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:جتنملا دودح
Transistوأs (BJT)

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Terminal FinishMATTE TIN
Terminal FوأmGULL WING
Power Dissipation Ambient-Max1.8 W
Package ShapeRECTANGULAR
StatusACTIVE
Lead FreeYes
Package Body MaterialPLASTIC/EPOXY
Transistوأ Element MaterialSILICON
Drain Current-Max (ID)0.1200 A
EU RoHS CompliantYes
ConfigurationSINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max45 ohm
Transistوأ TypeGENERAL PURPOSE POWER
Pulsed Drain Current-Max (IDM)0.4800 A
Channel TypeN-CHANNEL
China RoHS CompliantYes
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min600 V
Surface MountYes
Case ConnectionDRAIN
Mfr Package DescriptionGREEN, PLASTIC PACKAGE-4
Operating ModeENHANCEMENT
Number of Terminals4
Terminal PositionDUAL
Number of Elements1
Package StyleSMALL OUTLINE


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