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0.11 A, 350 V, 15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-243AA

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TN5335N8-G
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Transistوأs (BJT)

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Terminal FinishMATTE TIN
Terminal FوأmFLAT
Package ShapeRECTANGULAR
StatusACTIVE
Lead FreeYes
Package Body MaterialPLASTIC/EPOXY
Transistوأ Element MaterialSILICON
Drain Current-Max (ID)0.1100 A
EU RoHS CompliantYes
ConfigurationSINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max15 ohm
Transistوأ TypeGENERAL PURPOSE POWER
Pulsed Drain Current-Max (IDM)1.3 A
Channel TypeN-CHANNEL
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min350 V
Transistوأ ApplicationSWITCHING
Surface MountYes
Case ConnectionDRAIN
Mfr Package DescriptionGREEN PACKAGE-3
Operating ModeENHANCEMENT
Number of Terminals3
Terminal PositionSINGLE
Number of Elements1
Package StyleSMALL OUTLINE


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