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1.9 A, 900 V, 7.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

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AP02N90I
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Transistوأs (BJT)

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Terminal FوأmTHROUGH-HOLE
Avalanche Energy Rating (Eas)36 mJ
Package ShapeRECTANGULAR
StatusACTIVE
Package Body MaterialPLASTIC/EPOXY
Transistوأ Element MaterialSILICON
Drain Current-Max (ID)1.9 A
ConfigurationSINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max7.2 ohm
Transistوأ TypeGENERAL PURPOSE POWER
Pulsed Drain Current-Max (IDM)6 A
Channel TypeN-CHANNEL
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min900 V
Transistوأ ApplicationSWITCHING
Case ConnectionISOLATED
Mfr Package DescriptionROHS COMPLIANT, TO-220CFM, 3 PIN
Operating ModeENHANCEMENT
Number of Terminals3
Terminal PositionSINGLE
Number of Elements1
Package StyleFLANGE MOUNT


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