ةغراف قوستلا ةبرع

0.225 A, 60 V, 5.5 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET

:مقر ءزجلا
VQ1000N7
:عناصلا
:جتنملا دودح
Transistوأs (BJT)

جتنملا تامولعم

Terminal FinishTIN LEAD
Terminal FوأmTHROUGH-HOLE
Operating Temperature-Max150 Cel
Qualification StatusCOMMERCIAL
JESD-609 Codee0
Package ShapeRECTANGULAR
StatusDiscontinued
Package Body MaterialCERAMIC, METAL-SEALED COFIRED
Turn-on Time-Max (ton)10 ns
Transistوأ Element MaterialSILICON
Drain Current-Max (ID)0.2250 A
Drain Current-Max (Abs) (ID)0.5000 A
Sub CategوأyFET General Purpose Power
Peak Reflow Temperature (Cel)NOT SPECIFIED
ConfigurationSEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
Drain-source On Resistance-Max5.5 ohm
Moisture Sensitivity LevelNOT SPECIFIED
Pulsed Drain Current-Max (IDM)1 A
Turn-off Time-Max (toff)10 ns
DS Breakdown Voltage-Min60 V
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Transistوأ ApplicationSWITCHING
Surface MountNO
Mfr Package DescriptionCERAMIC, DIP-14
Operating ModeENHANCEMENT MODE
Polarity/Channel TypeN-CHANNEL
Number of Terminals14
Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
Power Dissipation-Max (Abs)2 W
JESD-30 CodeR-CDIP-T14
Terminal PositionDUAL
Feedback Cap-Max (Crss)5 pF
Number of Elements4
Package StyleIN-LINE


ةحاتإلا لجأ نم لصتا

:لجال رعسلا  لك:ىندألا دحلا  1

فدهتسملا رعسلا

.اًيضار كلعجن دقو ، لوبقملا رعسلا ضرعاكب صاخلا فدهتسملا رعسلا

ينف معد

ينف معد

ءالمعلا ءارآ

ةعجارم بتكأ

ءالمعلا باوجو لاؤس

لاؤس حرط