ةغراف قوستلا ةبرع

0.225 A, 60 V, 5.5 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET

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VQ1000J
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Transistوأs (BJT)

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Terminal FinishNOT SPECIFIED
Terminal FوأmTHROUGH-HOLE
Qualification StatusCOMMERCIAL
Package ShapeRECTANGULAR
Additional FeatureFAST SWITCHING, LOGIC LEVEL COMPATIBLE
StatusDiscontinued
Package StyleIN-LINE
Transistوأ Element MaterialSILICON
Drain Current-Max (ID)0.2250 A
ConfigurationSEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
Drain-source On Resistance-Max5.5 ohm
Pulsed Drain Current-Max (IDM)1 A
DS Breakdown Voltage-Min60 V
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Transistوأ ApplicationSWITCHING
Surface MountNO
Operating ModeENHANCEMENT MODE
Polarity/Channel TypeN-CHANNEL
Number of Terminals14
JESD-30 CodeR-PDIP-T14
Terminal PositionDUAL
Number of Elements4
Package Body MaterialPLASTIC/EPOXY


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