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26.1 A, 1200 V, 0.22 ohm, N-CHANNEL, SiC, POWER, MOSFET

:مقر ءزجلا
CPMF-1200-S160B
:عناصلا
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Transistوأs (BJT)

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Terminal FوأmNO LEAD
Avalanche Energy Rating (Eas)1100 mJ
Package ShapeSQUARE
StatusACTIVE
Package Body MaterialUNSPECIFIED
Transistوأ Element MaterialSILICON CARBIDE
Drain Current-Max (ID)26.1 A
ConfigurationSINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max0.2200 ohm
Transistوأ TypeGENERAL PURPOSE POWER
Pulsed Drain Current-Max (IDM)56 A
Channel TypeN-CHANNEL
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min1200 V
Transistوأ ApplicationSWITCHING
Surface MountYes
Mfr Package Description3.10 X 3.10 MM, ROHS COMPLIANT, DIE-3
Operating ModeENHANCEMENT
Number of Terminals3
Terminal PositionUPPER
Number of Elements1
Package StyleUNCASED CHIP


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