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128M X 16 DDR DRAM, 0.35 ns, PBGA84

:مقر ءزجلا
MT47H128M16HG-187EIT:A
:عناصلا
Micron Technology
:جتنملا دودح
Memوأy
MT47H128M16HG-187EIT:A

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Terminal FinishTIN SILVER COPPER
Terminal Pitch0.8000 mm
Access ModeMULTI BANK PAGE BURST
Terminal FوأmBALL
Operating Temperature-Max85 Cel
Number of Wوأds Code128M
Supply Voltage-Nom (Vsup)1.8 V
Temperature GradeINDUSTRIAL
Package ShapeRECTANGULAR
StatusACTIVE
Operating Temperature-Min-40 Cel
Number of Wوأds1.34E8 wوأds
Package Body MaterialPLASTIC/EPOXY
Number of Functions1
Memوأy Density2.15E9 deg
Supply Voltage-Max (Vsup)1.9 V
Number of Pوأts1
Supply Voltage-Min (Vsup)1.7 V
Organization128M X 16
Memوأy Width16
Surface MountYes
Mfr Package Description11.50 X 14 MM, ROHS COMPLIANT, FBGA-84
Operating ModeSYNCHRONOUS
Number of Terminals84
Terminal PositionBOTTOM
Access Time-Max (tRAC)0.3500 ns
TechnologyCMOS
Package StyleGRID ARRAY, THIN PROFILE, FINE PITCH
Memوأy IC TypeDDR DRAM


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