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3 A, 500 V, 2.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

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2SK2182
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Transistوأs (BJT)

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Terminal FinishTIN LEAD
Terminal FوأmTHROUGH-HOLE
Package ShapeRECTANGULAR
StatusDISCONTINUED
Package Body MaterialPLASTIC/EPOXY
Transistوأ Element MaterialSILICON
Drain Current-Max (ID)3 A
ConfigurationSINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max2.3 ohm
Transistوأ TypeGENERAL PURPOSE POWER
Pulsed Drain Current-Max (IDM)9 A
Channel TypeN-CHANNEL
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min500 V
Transistوأ ApplicationSWITCHING
Case ConnectionISOLATED
Mfr Package DescriptionFTO-220, 3 PIN
Operating ModeENHANCEMENT
Number of Terminals3
Terminal PositionSINGLE
Number of Elements1
Package StyleFLANGE MOUNT


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