ةغراف قوستلا ةبرع

1.1 A, 250 V, 3.5 ohm, N-CHANNEL, Si, POWER, MOSFET

:مقر ءزجلا
DN2625DK6-G
:عناصلا
:جتنملا دودح
Transistوأs (BJT)

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Terminal FinishMATTE TIN
Terminal FوأmNO LEAD
Package ShapeRECTANGULAR
StatusACTIVE
Lead FreeYes
Package Body MaterialPLASTIC/EPOXY
Transistوأ Element MaterialSILICON
Drain Current-Max (ID)1.1 A
EU RoHS CompliantYes
ConfigurationSINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max3.5 ohm
Transistوأ TypeGENERAL PURPOSE POWER
Pulsed Drain Current-Max (IDM)3.3 A
Channel TypeN-CHANNEL
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min250 V
Transistوأ ApplicationSWITCHING
Surface MountYes
Case ConnectionDRAIN
Mfr Package Description5 X 5 MM, 0.90 MM HEIGHT, GREEN, QFN-8
Operating ModeDEPLETION
Number of Terminals8
Terminal PositionDUAL
Number of Elements1
Package StyleSMALL OUTLINE


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