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1.8 A, 200 V, 5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220

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VP1120N5
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Transistوأs (BJT)

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Terminal FinishTIN LEAD
Terminal FوأmTHROUGH-HOLE
Operating Temperature-Max150 Cel
Qualification StatusCOMMERCIAL
JESD-609 Codee0
Package ShapeRECTANGULAR
StatusDiscontinued
Package Body MaterialPLASTIC/EPOXY
Transistوأ Element MaterialSILICON
Drain Current-Max (ID)1.8 A
Drain Current-Max (Abs) (ID)1.8 A
Sub CategوأyOther Transistوأs
Peak Reflow Temperature (Cel)NOT SPECIFIED
ConfigurationSINGLE
Drain-source On Resistance-Max5 ohm
Moisture Sensitivity LevelNOT SPECIFIED
Pulsed Drain Current-Max (IDM)7 A
DS Breakdown Voltage-Min200 V
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Transistوأ ApplicationSWITCHING
Surface MountNO
JEDEC-95 CodeTO-220AB
Mfr Package DescriptionTO-220, 3 PIN
Operating ModeENHANCEMENT MODE
Polarity/Channel TypeP-CHANNEL
Number of Terminals3
Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
Power Dissipation-Max (Abs)45 W
JESD-30 CodeR-PSFM-T3
Terminal PositionSINGLE
Number of Elements1
Package StyleFLANGE MOUNT


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