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8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET

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YTAF840
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Transistوأs (BJT)

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Terminal FinishTIN LEAD
Terminal FوأmTHROUGH-HOLE
Avalanche Energy Rating (Eas)312 mJ
Package ShapeRECTANGULAR
StatusACTIVE
Package Body MaterialPLASTIC/EPOXY
Transistوأ Element MaterialSILICON
Drain Current-Max (ID)8 A
ConfigurationSINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max0.8500 ohm
Transistوأ TypeGENERAL PURPOSE POWER
Pulsed Drain Current-Max (IDM)32 A
Channel TypeN-CHANNEL
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min500 V
Transistوأ ApplicationSWITCHING
Case ConnectionISOLATED
Mfr Package Description2-10R1B, SC-67, 3 PIN
Operating ModeENHANCEMENT
Number of Terminals3
Terminal PositionSINGLE
Number of Elements1
Package StyleFLANGE MOUNT


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