8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET

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Produktinfodermation

Terminal Finish	TIN LEAD
Terminal Foderm	THROUGH-HOLE
Avalanche Energy Rating (Eas)	312 mJ
Package Shape	RECTANGULAR
Status	ACTIVE
Package Body Material	PLASTIC/EPOXY
Transistoder Element Material	SILICON
Drain Current-Max (ID)	8 A
Configuration	SINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max	0.8500 ohm
Transistoder Type	GENERAL PURPOSE POWER
Pulsed Drain Current-Max (IDM)	32 A
Channel Type	N-CHANNEL
FET Technology	METAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min	500 V
Transistoder Application	SWITCHING
Case Connection	ISOLATED
Mfr Package Description	2-10R1B, SC-67, 3 PIN
Operating Mode	ENHANCEMENT
Number of Terminals	3
Terminal Position	SINGLE
Number of Elements	1
Package Style	FLANGE MOUNT

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