TRANS SJT 650V 4A TO-257

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Produktinfodermation

Categodery	Discrete Semiconductoder Products
FET Feature	Super Junction
Vgs(th) (Max) @ Id	-
Package / Case	TO-257-3
Current - Continuous Drain (Id) @ 25 C	4A (Tc) (165 C)
Gate Charge (Qg) @ Vgs	-
Product Photos	2N763x-GA
Rds On (Max) @ Id, Vgs	415 mOhm @ 4A
Datasheets	2N7635-GA
FET Type	Silicon Carbide, Nodermally Off
Standard Package	10
Drain to Source Voltage (Vdss)	650V
Online Catalog	Silicon Carbide (SiC) Super Junction FETs
Family	FETs - Single
Mounting Type	Through Hole
Series	-
Supplier Device Package	TO-257
Packaging	Bulk
Power - Max	7W
Design Resources	2N7635-GA Spice Model
Input Capacitance (Ciss) @ Vds	324pF @ 35V
Other Names	1242-1146

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