Trans RF MOSFET N-CH 65V 3A 4-Pin SOT-123A Blister

Das tatsächliche Produkt kann vom gezeigten Bild abweichen

Produktinfodermation

Reverse Capacitance (Typ)	4.5@28V pF
Continuous Drain Current	3 A
Mounting	Screw
Mode Of Operation	CW Class-B
Application	VHF
Drain Efficiency (Typ)	65 %
Output Power (Max)	15W
Screening Level	Military
VSWR (Max)	50
Input Capacitance (Typ)@Vds	60@28V pF
Package Type	SOT-123A
Drain Source Resistance (Max)	1500@10V mohm
Drain Source Voltage (Max)	65 V
Foderward Transconductance (Typ)	0.6(Min) S
Frequency (Max)	175 MHz
Channel Type	N
Output Capacitance (Typ)@Vds	40@28V pF
Operating Temp Range	-65C to 200C
Pin Count	4
Channel Mode	Enhancement
Packaging	Blister
Rad Hardened	No
Power Gain (Typ)@Vds	17@28V/15@12.5V dB
Power Dissipation (Max)	38000 mW
Number of Elements	1

Bieten Sie Ihren akzeptablen Preis an, und wir können Sie zufrieden stellen.Dein Zielpreis