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0.2 A, 240 V, 20 ohm, N-CHANNEL, Si, POWER, MOSFET

Part No.:
BSP129E7941
Manufacturer:
Infineon Technologies
Product Range:
Transistors (BJT)
BSP129E7941

Product Information

Terminal FinishMATTE TIN
Terminal FormGULL WING
Power Dissipation Ambient-Max1.7 W
Package ShapeRECTANGULAR
StatusACTIVE
Package Body MaterialPLASTIC/EPOXY
Transistor Element MaterialSILICON
Drain Current-Max (ID)0.2000 A
ConfigurationSINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max20 ohm
Transistor TypeGENERAL PURPOSE POWER
Pulsed Drain Current-Max (IDM)0.6000 A
Channel TypeN-CHANNEL
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min240 V
Surface MountYes
Case ConnectionDRAIN
Operating ModeDEPLETION
Number of Terminals4
Terminal PositionDUAL
Number of Elements1
Package StyleSMALL OUTLINE


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