Your cart is empty

Trans RF MOSFET N-CH 12.5V 0.03A 4-Pin USQ T/R

Part No.:
3SK293TE85LF
Manufacturer:
Toshiba
Product Range:
Transistors - RF FET
3SK293TE85LF

Product Information

PolarityN
Reverse Capacitance (Typ)16@6V(pF)
Noise Figure (Max)2.5(dB)
Continuous Drain Current0.03(A)
MountingSurface Mount
ApplicationUHF
Screening LevelMilitary
TypeRF MOSFET
Gate-Source Voltage (Max) 8 V
Input Capacitance (Typ)@Vds2@6V(pF)
Package TypeUSQ
Drain Source Voltage (Max)12.5(V)
Channel TypeN
Operating Temp Range-55C to 125C
Pin Count4
Channel ModeEnhancement
Drain-Source On-Volt12.5 V
PackagingTape and Reel
Power Dissipation0.1 W
Rad HardenedNo
Power Gain (Typ)@Vds22.5@6V(dB)
Power Dissipation (Max)100(mW)
Number of Elements1


Call for Availability
Price for:  EachMinimum:  1

Target Price

Offer your acceptable price, and we may make you satisfied.Your Target Price

Technical Support

Technical Support

Customer Reviews

Write Review

Customer Q&A Exchange

Ask A Question