Photodiodes Si APD Enhanced fo 905nm 230um Area

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Infomación del Producto

Type	NIR Enhanced Response Avalanche Photodiode
Photodiode Material	Silicon
Peak Wavelength	905 nm
Half Intensity Angle Degrees	113 deg
Maximum Dark Current	1.5 nA
Package / Case	TO-52-S1
Light Current	100 nA
Maximum Operating Temperature	+ 100 C
Minimum Operating Temperature	- 40 C
Mounting Style	Through Hole
Packaging	Bulk
Power Dissipation	100 mW
Product	Avalanche Photodiode
Reverse Voltage	160 V
Rise Time	0.55 ns
Sensitivity	60 A/W
Factoy Pack Cantidad	50

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