Photodiodes High Speed Si APD 800um Active Area

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Infomación del Producto

Type	Silicon Avalanche Photodiode
Photodiode Material	Silicon
Peak Wavelength	410 nm
Half Intensity Angle Degrees	64 deg
Maximum Dark Current	5 nA
Package / Case	TO-52-S1
Light Current	2 uA
Maximum Operating Temperature	+ 85 C
Minimum Operating Temperature	- 40 C
Mounting Style	Through Hole
Packaging	Bulk
Power Dissipation	100 mW
Product	Avalanche Photodiode
Reverse Voltage	100 V
Rise Time	0.28 ns
Sensitivity	25 A/W
Factoy Pack Cantidad	50

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