Photodiodes Si APD Enhanced fo 905nm.33mm Area

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Infomación del Producto

Type	NIR Enhanced Response Avalanche Photodiode
Photodiode Material	Silicon
Peak Wavelength	905 nm
Half Intensity Angle Degrees	120 deg
Maximum Dark Current	6 nA
Package / Case	TO-5i
Light Current	1 uA
Maximum Operating Temperature	+ 70 C
Minimum Operating Temperature	- 20 C
Mounting Style	Through Hole
Packaging	Bulk
Power Dissipation	100 mW
Product	Avalanche Photodiode
Reverse Voltage	120 V
Rise Time	1 ns
Sensitivity	60 A/W
Factoy Pack Cantidad	25

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