MOSFET 100V 90A E-Mode GaN Preproduction Units

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Infomación del Producto

Mounting Style	SMD/SMT
Vds - Drain-Source Breakdown Voltage	100 V
Transisto Polarity	N-Channel
Rds On - Drain-Source Resistance	7.4 mOhms
Channel Mode	Enhancement
Technology	GaN
Brand	GaN Systems
Id - Continuous Drain Current	90 A
Vgs th - Gate-Source Threshold Voltage	1.6 V
Packaging	Tray
Product Categoy	MOSFET
Qg - Gate Charge	12 nC
Configuration	Single
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
RoHS	Details
Manufacturer	GaN Systems

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