MOSFET 2N-CH 1200V 100A SIC

El producto real puede diferir de la imagen mostrada

Infomación del Producto

Categoy	Discrete Semiconducto Products
FET Feature	Standard
Mounting Type	Chassis Mount
Family	FETs - Modules
Vgs(th) (Max) @ Id	1.6V @ 34mA
Series	-
Package / Case	Module
Supplier Device Package	Module
Datasheets	QJD1210SA1 Preliminary Datasheet Next Generation Power Semiconductos Brief
Rds On (Max) @ Id, Vgs	17 mOhm @ 100A, 15V
FET Type	2 N-Channel (Dual)
Packaging	Bulk
Power - Max	520W
Standard Package	1
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Current - Continuous Drain (Id) @ 25 C	100A
Input Capacitance (Ciss) @ Vds	8200pF @ 10V
Gate Charge (Qg) @ Vgs	330nC @ 15V

Ofrezca su precio aceptable y podemos satisfacerlo.Tu precio deseado