1 A, 600 V, 12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251

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Infomación del Producto

Status	ACTIVE
Channel Type	N-CHANNEL
Package Body Material	PLASTIC/EPOXY
Mfr Package Description	ROHS COMPLIANT PACKAGE-3
Pulsed Drain Current-Max (IDM)	3 A
Terminal Fom	THROUGH-HOLE
Operating Mode	ENHANCEMENT
Package Style	IN-LINE
Avalanche Energy Rating (Eas)	0.5000 mJ
Transisto Application	SWITCHING
Drain Current-Max (ID)	1 A
Transisto Element Material	SILICON
FET Technology	METAL-OXIDE SEMICONDUCTOR
Terminal Position	SINGLE
Transisto Type	GENERAL PURPOSE POWER
Package Shape	RECTANGULAR
Configuration	SINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max	12 ohm
Number of Terminals	3
DS Breakdown Voltage-Min	600 V
Number of Elements	1

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