MOSFET 2N-CH 1200V 100A SIC

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Infomación del Producto

Categoy	Discrete Semiconducto Products
FET Feature	Standard
Mounting Type	Chassis Mount
Family	FETs - Modules
Vgs(th) (Max) @ Id	5V @ 10mA
Series	-
Package / Case	Module
Supplier Device Package	Module
Datasheets	Full SiC & Hybride SiC IGBTs Brief QJD1210010 Preliminary Datasheet
Rds On (Max) @ Id, Vgs	25 mOhm @ 100A, 20V
FET Type	2 N-Channel (Dual)
Packaging	Bulk
Power - Max	1080W
Standard Package	1
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Current - Continuous Drain (Id) @ 25 C	100A
Input Capacitance (Ciss) @ Vds	10200pF @ 800V
Gate Charge (Qg) @ Vgs	500nC @ 20V

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