Photodiodes Si APD Enhanced fo 905nm 500um Area

El producto real puede diferir de la imagen mostrada

Infomación del Producto

Type	NIR Enhanced Response Avalanche Photodiode
Photodiode Material	Silicon
Peak Wavelength	905 nm
Half Intensity Angle Degrees	108 deg
Maximum Dark Current	5 nA
Package / Case	TO-52-S1
Light Current	1 uA
Maximum Operating Temperature	+ 100 C
Minimum Operating Temperature	- 40 C
Mounting Style	Through Hole
Packaging	Bulk
Power Dissipation	100 mW
Product	Avalanche Photodiode
Reverse Voltage	160 V
Rise Time	550 ps
Sensitivity	60 A/W
Factoy Pack Cantidad	50

Ofrezca su precio aceptable y podemos satisfacerlo.Tu precio deseado