Photodiodes Si APD Enhanced fo 905nm 1130um Area

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Infomación del Producto

Type	NIR Enhanced Avalanche Photodiode
Photodiode Material	Silicon
Peak Wavelength	905 nm
Half Intensity Angle Degrees	92 deg
Maximum Dark Current	10 nA
Package / Case	TO-52
Light Current	1 uA
Maximum Operating Temperature	+ 100 C
Minimum Operating Temperature	- 40 C
Mounting Style	Through Hole
Packaging	Bulk
Power Dissipation	100 mW
Product	Avalanche Photodiode
Reverse Voltage	180 V
Rise Time	1.3 ns
Sensitivity	60 A/W
Factoy Pack Cantidad	20

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