Phototransisto Chip Silicon NPN Transisto 800nm 2-Pin T-1

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Infomación del Producto

Polarity	NPN
Collecto Current (DC)	0.02 A
Emitter-Collecto Voltage (Max)	5 V
Peak Wavelength	800 nm
Collecto-Emitter Voltage	30 V
Mounting	Through Hole
Rad Hardened	No
Light Current	150 uA
Operating Temperature Classification	Commercial
Power Dissipation	0.075 W
Operating Temp Range	-30C to 85C
Package Type	T-1
Number of Elements	1
Dark Current	100 nA
Phototransisto Type	Phototransisto
Rise Time	9000 ns
Collecto-Emitter Sat Volt (max)	0.4 V
Pin Count	2
Half-Intensity Angle	60 deg
Fall Time	10000 ns

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