26.1 A, 1200 V, 0.22 ohm, N-CHANNEL, SiC, POWER, MOSFET

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Infoumation produit

Terminal Foum	NO LEAD
Avalanche Energy Rating (Eas)	1100 mJ
Package Shape	SQUARE
Status	ACTIVE
Package Body Material	UNSPECIFIED
Transistou Element Material	SILICON CARBIDE
Drain Current-Max (ID)	26.1 A
Configuration	SINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max	0.2200 ohm
Transistou Type	GENERAL PURPOSE POWER
Pulsed Drain Current-Max (IDM)	56 A
Channel Type	N-CHANNEL
FET Technology	METAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min	1200 V
Transistou Application	SWITCHING
Surface Mount	Yes
Mfr Package Description	3.10 X 3.10 MM, ROHS COMPLIANT, DIE-3
Operating Mode	ENHANCEMENT
Number of Terminals	3
Terminal Position	UPPER
Number of Elements	1
Package Style	UNCASED CHIP

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