8.3 A, 700 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA

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Product Information

Status	ACTIVE
Channel Type	N-CHANNEL
Package Body Material	PLASTIC/EPOXY
Mfr Package Description	ROHS COMPLIANT, TO-262, 3 PIN
Pulsed Drain Current-Max (IDM)	40 A
Terminal Form	THROUGH-HOLE
Operating Mode	ENHANCEMENT
Package Style	IN-LINE
Avalanche Energy Rating (Eas)	32 mJ
Transistor Application	SWITCHING
Drain Current-Max (ID)	8.3 A
Transistor Element Material	SILICON
FET Technology	METAL-OXIDE SEMICONDUCTOR
Terminal Position	SINGLE
Transistor Type	GENERAL PURPOSE POWER
Package Shape	RECTANGULAR
Configuration	SINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max	0.8500 ohm
Number of Terminals	3
DS Breakdown Voltage-Min	700 V
Number of Elements	1

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