19 A, 25 V, 0.0038 ohm, N-CHANNEL, Si, POWER, MOSFET

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Product Information

Terminal Form	NO LEAD
Avalanche Energy Rating (Eas)	28.8 mJ
Package Shape	RECTANGULAR
Status	ACTIVE
Package Body Material	UNSPECIFIED
Transistor Element Material	SILICON
Drain Current-Max (ID)	19 A
Configuration	SINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max	0.0038 ohm
Transistor Type	GENERAL PURPOSE POWER
Pulsed Drain Current-Max (IDM)	150 A
Channel Type	N-CHANNEL
FET Technology	METAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min	25 V
Transistor Application	SWITCHING
Surface Mount	Yes
Case Connection	DRAIN
Mfr Package Description	HALOGEN AND LEAD FREE, GREENFET PACKAGE-2
Operating Mode	ENHANCEMENT
Number of Terminals	2
Terminal Position	BOTTOM
Number of Elements	1
Package Style	CHIP CARRIER

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