1.1 A, 100 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET

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Product Information

Terminal Finish	MATTE TIN
Terminal Form	GULL WING
Power Dissipation Ambient-Max	1.79 W
Package Shape	RECTANGULAR
Status	DISCONTINUED
Package Body Material	PLASTIC/EPOXY
Transistor Element Material	SILICON
Drain Current-Max (ID)	1.1 A
Configuration	SINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max	0.7000 ohm
Transistor Type	GENERAL PURPOSE POWER
Pulsed Drain Current-Max (IDM)	4.4 A
Channel Type	N-CHANNEL
FET Technology	METAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min	100 V
Surface Mount	Yes
Case Connection	DRAIN
Mfr Package Description	GREEN, PLASTIC PACKAGE-4
Operating Mode	ENHANCEMENT
Number of Terminals	4
Terminal Position	DUAL
Number of Elements	1
Package Style	SMALL OUTLINE

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