UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET

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Product Information

Terminal Form	FLAT
Power Dissipation Ambient-Max	0.8000 W
Package Shape	RECTANGULAR
Status	ACTIVE
Package Body Material	PLASTIC/EPOXY
Transistor Element Material	SILICON
Power Gain-Min (Gp)	20 dB
Drain Current-Max (ID)	0.2000 A
Configuration	SINGLE
Transistor Type	RF SMALL SIGNAL
Channel Type	N-CHANNEL
FET Technology	METAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min	30 V
Transistor Application	AMPLIFIER
Surface Mount	Yes
Case Connection	SOURCE
Mfr Package Description	ROHS COMPLIANT PACKAGE-3
Operating Mode	ENHANCEMENT
Number of Terminals	3
Highest Frequency Band	ULTRA HIGH FREQUENCY BAND
Terminal Position	SINGLE
Number of Elements	1
Package Style	SMALL OUTLINE

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