UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET

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Product Information

Terminal Finish	NOT SPECIFIED
Terminal Form	THROUGH-HOLE
Package Shape	RECTANGULAR
Status	ACTIVE
Lead Free	Yes
Package Body Material	PLASTIC/EPOXY
Transistor Element Material	SILICON
Drain Current-Max (ID)	4 A
EU RoHS Compliant	Yes
Configuration	SINGLE
Transistor Type	RF POWER
Channel Type	N-CHANNEL
FET Technology	METAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min	30 V
Transistor Application	AMPLIFIER
Case Connection	SOURCE
Operating Mode	ENHANCEMENT
Number of Terminals	3
Highest Frequency Band	ULTRA HIGH FREQUENCY BAND
Terminal Position	SINGLE
Number of Elements	1
Package Style	FLANGE MOUNT

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