UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET

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Product Information

Status	ACTIVE
Package Body Material	CERAMIC, METAL-SEALED COFIRED
Channel Type	N-CHANNEL
Terminal Form	FLAT
Operating Mode	ENHANCEMENT
Package Style	FLANGE MOUNT
Drain Current-Max (ID)	20 A
Transistor Application	AMPLIFIER
Highest Frequency Band	ULTRA HIGH FREQUENCY BAND
Number of Elements	1
Case Connection	SOURCE
Transistor Element Material	SILICON
FET Technology	METAL-OXIDE SEMICONDUCTOR
Terminal Position	DUAL
Transistor Type	RF POWER
Package Shape	RECTANGULAR
Configuration	SINGLE
Number of Terminals	2
DS Breakdown Voltage-Min	30 V
Surface Mount	Yes

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