X BAND, GaAs, N-CHANNEL, RF POWER, HEMFET

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Product Information

Status	EOL/LIFEBUY
Channel Type	N-CHANNEL
Terminal Finish	NOT SPECIFIED
Package Body Material	UNSPECIFIED
Mfr Package Description	DIE-6
Terminal Form	NO LEAD
Operating Mode	DEPLETION
Package Style	UNCASED CHIP
Transistor Application	AMPLIFIER
Highest Frequency Band	X BAND
FET Technology	HIGH ELECTRON MOBILITY
Terminal Position	UPPER
Transistor Type	RF POWER
Package Shape	RECTANGULAR
Transistor Element Material	GALLIUM ARSENIDE
Number of Terminals	6
DS Breakdown Voltage-Min	5.5 V
Surface Mount	Yes

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