0.645 A, 250 V, 3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA

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Product Information

Terminal Finish	TIN LEAD
Terminal Form	GULL WING
Qualification Status	COMMERCIAL
JESD-609 Code	e0
Package Shape	RECTANGULAR
Additional Feature	LOGIC LEVEL COMPATIBLE
Status	Discontinued
Package Body Material	PLASTIC/EPOXY
Transistor Element Material	SILICON
Drain Current-Max (ID)	0.6450 A
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Configuration	SINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max	3 ohm
Moisture Sensitivity Level	NOT SPECIFIED
Pulsed Drain Current-Max (IDM)	3 A
DS Breakdown Voltage-Min	250 V
FET Technology	METAL-OXIDE SEMICONDUCTOR
Transistor Application	SWITCHING
Surface Mount	YES
JEDEC-95 Code	TO-252AA
Mfr Package Description	DPAK-3
Operating Mode	ENHANCEMENT MODE
Polarity/Channel Type	P-CHANNEL
Number of Terminals	2
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSSO-G2
Terminal Position	SINGLE
Number of Elements	1
Package Style	SMALL OUTLINE

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