X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET

The actual product may differ from image shown

Product Information

Terminal Finish	TIN LEAD
Terminal Form	GULL WING
Power Dissipation Ambient-Max	0.1500 W
Package Shape	RECTANGULAR
Status	ACTIVE
Package Body Material	PLASTIC/EPOXY
Transistor Element Material	GALLIUM ARSENIDE
Power Gain-Min (Gp)	10 dB
Drain Current-Max (ID)	0.0800 A
Configuration	SINGLE
Transistor Type	RF SMALL SIGNAL
Channel Type	N-CHANNEL
FET Technology	JUNCTION
Transistor Application	AMPLIFIER
Surface Mount	Yes
Case Connection	SOURCE
Operating Mode	DEPLETION
Number of Terminals	4
Highest Frequency Band	X BAND
Terminal Position	QUAD
Number of Elements	1
Package Style	SMALL OUTLINE

Offer your acceptable price, and we may make you satisfied.Your Target Price