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Transistors RF GaAs .5-3GHz 10W 12Volts pHEMT

Weight:
0.0005kg
Product Range:
Transistors - RF

Product Information

Forward Transconductance gFS (Max / Min)4 S
Gate-Source Breakdown Voltage- 8 V
Continuous Drain Current3 A
Maximum Operating Temperature+ 150 C
Power Dissipation10 W
PackagingTray


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