Transistors RF MOSFET Power 100-200MHz 45Watts 28Volt Gain 17dB

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Product Information

Configuration	Single
Transistor Polarity	N-Channel
Frequency	30 MHz to 200 MHz
Gain	19.5 dB at 150 MHz
Output Power	45 W
Drain-Source Breakdown Voltage	65 V
Continuous Drain Current	4.5 A
Gate-Source Breakdown Voltage	+/- 20 V
Maximum Operating Temperature	+ 150 C
Package / Case	Case 211-07
Packaging	Tray
Minimum Operating Temperature	- 65 C
Mounting Style	SMD/SMT
Power Dissipation	115 W

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