Transistors RF MOSFET Power 5-175MHz 80Watts 28Volt Gain 13dB

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Product Information

Configuration	Single
Transistor Polarity	N-Channel
Frequency	200 MHz
Gain	13 dB at 150 MHz
Output Power	80 W
Drain-Source Breakdown Voltage	65 V
Continuous Drain Current	9 A
Gate-Source Breakdown Voltage	+/- 40 V
Maximum Operating Temperature	+ 150 C
Package / Case	Case 211-11
Packaging	Tray
Minimum Operating Temperature	- 65 C
Mounting Style	SMD/SMT
Power Dissipation	220 W

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