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RF JFET Transistors Super Low Noise Pseudomorphic

Part No.:
NE3515S02-T1D-A
Manufacturer:
CEL
Product Range:
RF
NE3515S02-T1D-A

Product Information

Factory Pack Quantity10000
TechnologyGaAs
Product CategoryRF JFET Transistors
Vgs - Gate-Source Breakdown Voltage- 3 V
Forward Transconductance - Min70 mS
BrandCEL
Id - Continuous Drain Current88 mA
PackagingReel
Pd - Power Dissipation165 mW
Mounting StyleSMD/SMT
Vds - Drain-Source Breakdown Voltage4 V
NF - Noise Figure0.3 dB
Gain12.5 dB
P1dB - Compression Point14 dBm
Package / CaseS0-2
Transistor TypepHEMT
Frequency12 GHz
Maximum Operating Temperature+ 125 C
RoHSDetails
ManufacturerCEL


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