RF JFET Transistors Super Low Noise Pseudomorphic

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Product Information

Factory Pack Quantity	10000
Technology	GaAs
Product Category	RF JFET Transistors
Vgs - Gate-Source Breakdown Voltage	- 3 V
Forward Transconductance - Min	70 mS
Brand	CEL
Id - Continuous Drain Current	88 mA
Packaging	Reel
Pd - Power Dissipation	165 mW
Mounting Style	SMD/SMT
Vds - Drain-Source Breakdown Voltage	4 V
NF - Noise Figure	0.3 dB
Gain	12.5 dB
P1dB - Compression Point	14 dBm
Package / Case	S0-2
Transistor Type	pHEMT
Frequency	12 GHz
Maximum Operating Temperature	+ 125 C
RoHS	Details
Manufacturer	CEL

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