RF JFET Transistors DC-12GHz 4mm Pwr pHEMT (0.35um)

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Product Information

Factory Pack Quantity	200
Product Category	RF JFET Transistors
Vgs - Gate-Source Breakdown Voltage	- 14 V
Forward Transconductance - Min	1.5 S
Brand	TriQuint (Qorvo)
Id - Continuous Drain Current	1.2 A
Packaging	Gel Pack
Mounting Style	SMD/SMT
Vds - Drain-Source Breakdown Voltage	12 V
Gain	11 dB
P1dB - Compression Point	36 dBm
Package / Case	Die 8 Pin
Transistor Type	pHEMT
Part # Aliases	1077214
Frequency	12 GHz
Technology	GaAs
Maximum Operating Temperature	+ 150 C
RoHS	Details
Manufacturer	Qorvo

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