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Home Semiconductors - ICs RF RF JFET Transistors DC-12GHz 12W 32V GaN P3dB @ 3GHz 41.2dBm

RF JFET Transistors DC-12GHz 12W 32V GaN P3dB @ 3GHz 41.2dBm

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Product Information

Vds - Drain-Source Breakdown Voltage	32 V
Transistor Polarity	N-Channel
Package / Case	Die
Part # Aliases	1112257
Mounting Style	SMD/SMT
Product Category	RF JFET Transistors
Maximum Drain Gate Voltage	100 V
Brand	TriQuint (Qorvo)
Gain	18.2 dB
Configuration	Single
Maximum Operating Temperature	+ 150 C
Manufacturer	Qorvo
Transistor Type	HEMT
Operating Temperature Range	- 65 C to + 150 C
Id - Continuous Drain Current	820 mA
Output Power	41.6 dBm
RoHS	Details
Packaging	Waffle
Frequency	15 GHz
Minimum Operating Temperature	- 65
Pd - Power Dissipation	17 W
Technology	GaN SiC

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