1 A, 800 V, 12.3 ohm, N-CHANNEL, Si, POWER, MOSFET

The actual product may differ from image shown

Product Information

Terminal Finish	NOT SPECIFIED
Terminal Form	GULL WING
Package Shape	RECTANGULAR
Status	DISCONTINUED
Package Body Material	PLASTIC/EPOXY
Transistor Element Material	SILICON
Drain Current-Max (ID)	1 A
Configuration	SINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max	12.3 ohm
Transistor Type	GENERAL PURPOSE POWER
Channel Type	N-CHANNEL
FET Technology	METAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min	800 V
Transistor Application	SWITCHING
Surface Mount	Yes
Case Connection	DRAIN
Mfr Package Description	TO-220S, 3 PIN
Operating Mode	ENHANCEMENT
Number of Terminals	2
Terminal Position	SINGLE
Number of Elements	1
Package Style	SMALL OUTLINE

Offer your acceptable price, and we may make you satisfied.Your Target Price