X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET

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Product Information

Terminal Finish	NOT SPECIFIED
Terminal Form	NO LEAD
Power Dissipation Ambient-Max	0.5000 W
Package Shape	RECTANGULAR
Status	DISCONTINUED
Lead Free	Yes
Package Body Material	UNSPECIFIED
Transistor Element Material	GALLIUM ARSENIDE
EU RoHS Compliant	Yes
Configuration	SINGLE
Transistor Type	RF SMALL SIGNAL
Channel Type	N-CHANNEL
FET Technology	HIGH ELECTRON MOBILITY
DS Breakdown Voltage-Min	8 V
Transistor Application	AMPLIFIER
Surface Mount	Yes
Mfr Package Description	ROHS COMPLIANT, DIE-4
Operating Mode	ENHANCEMENT
Number of Terminals	4
Highest Frequency Band	X BAND
Terminal Position	UPPER
Number of Elements	1
Package Style	UNCASED CHIP

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