5 A, 200 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET

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Product Information

Status	ACTIVE
Package Body Material	PLASTIC/EPOXY
Channel Type	N-CHANNEL
Terminal Form	GULL WING
Operating Mode	ENHANCEMENT
Package Style	SMALL OUTLINE
Drain Current-Max (ID)	5 A
Transistor Element Material	SILICON
Number of Elements	1
Case Connection	DRAIN
FET Technology	METAL-OXIDE SEMICONDUCTOR
Terminal Position	SINGLE
Transistor Type	GENERAL PURPOSE POWER
Package Shape	RECTANGULAR
Configuration	SINGLE
Drain-source On Resistance-Max	0.6500 ohm
Number of Terminals	2
DS Breakdown Voltage-Min	200 V
Surface Mount	Yes

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