X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET

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Product Information

Terminal Finish	GOLD
Terminal Form	FLAT
Package Shape	RECTANGULAR
Status	ACTIVE
Package Body Material	CERAMIC, METAL-SEALED COFIRED
Transistor Element Material	GALLIUM ARSENIDE
Power Gain-Min (Gp)	18 dB
Drain Current-Max (ID)	0.4200 A
Configuration	SINGLE
Transistor Type	RF SMALL SIGNAL
Channel Type	N-CHANNEL
FET Technology	METAL SEMICONDUCTOR
DS Breakdown Voltage-Min	11 V
Transistor Application	AMPLIFIER
Surface Mount	Yes
Case Connection	SOURCE
Mfr Package Description	HERMETIC SEALED, MWP-25, 3 PIN
Operating Mode	DEPLETION
Number of Terminals	2
Highest Frequency Band	X BAND
Terminal Position	DUAL
Number of Elements	1
Package Style	FLANGE MOUNT

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