IGBT Array & Module Transistor, 1.2 kA, 3.15 V, 14.7 kW, 3.3 kV,

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Product Information

Transistor Polarity:	-
Collector Emitter Voltage V(br)ceo:	3.3 kV
Collector Emitter Voltage Vces:	3.15 V
No. of Pins:	9
DC Collector Current:	1.2 kA
Power Dissipation Pd:	14.7 kW
Transistor Case Style:	Module
Operating Temperature Max:	150 C
SVHC:	To Be Advised

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