IGBT Array & Module Transistor, Dual Pack, Dual N Channel, 1.4 k

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Product Information

Transistor Polarity:	Dual N Channel
Collector Emitter Voltage V(br)ceo:	1.7 kV
Collector Emitter Voltage Vces:	2.1 V
No. of Pins:	12
DC Collector Current:	1.4 kA
Power Dissipation Pd:	6.25 kW
Transistor Case Style:	Module
Operating Temperature Max:	150 C
SVHC:	To Be Advised

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