Transistors RF GaAs Super Lo Noise HJFET

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Product Information

Technology Type	pHEMT
Frequency	12 GHz
Gain	13.5 dB
Noise Figure	0.35 dB
Forward Transconductance gFS (Max / Min)	55 mS
Drain Source Voltage VDS	4 V
Gate-Source Breakdown Voltage	- 3 V
Continuous Drain Current	70 mA
Maximum Operating Temperature	+ 125 C
Power Dissipation	165 mW
Mounting Style	SMD/SMT
Package / Case	SO-1
Gate-Source Cutoff Voltage	2 V
Packaging	Cut Tape

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