Transistors RF GaAs GaAs LN Transistor

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Product Information

Technology Type	pHEMT
Frequency	1.8 GHz
Gain	17 dB
Noise Figure	0.5 dB
Forward Transconductance gFS (Max / Min)	200 mS
Drain Source Voltage VDS	5.5 V
Gate-Source Breakdown Voltage	- 2 V
Continuous Drain Current	140 mA
Maximum Operating Temperature	+ 150 C
Power Dissipation	350 mW
Mounting Style	SMD/SMT
Package / Case	SC70
Packaging	Reel

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